IXTP50N25T

MOSFET 50 Amps 250V 50 Rds

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SeekIC No. : 00150924 Detail

IXTP50N25T: MOSFET 50 Amps 250V 50 Rds

floor Price/Ceiling Price

Part Number:
IXTP50N25T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 60 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 60 mOhms


Parameters:

Technical/Catalog InformationIXTP50N25T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs50 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs78nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP50N25T
IXTP50N25T



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