MOSFET 62 Amps 150V 0.04 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 62 A | ||
| Resistance Drain-Source RDS (on) : | 0.04 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
|
Symbol |
Test Conditions |
Ratings | |
|
VDSS VDGR |
TJ = 25 to 175 TJ = 25 to 175; RGS = 1 M |
150 150 |
V V |
|
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
|
ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
62 150 |
A A |
|
IAR EAR EAS |
TC = 25 TC = 25 TC = 25 |
50 30 1.0 |
A mJ J |
|
dv/dt |
IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150, RG = 100 |
10 |
V/ns |
|
PD |
TC = 25 |
350 |
W |
|
TJ TJM Tstg |
-55 ... +175 175 -55 ... +150 |
| |
|
TL TSOLD |
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s |
300 2600 |
|
|
Md |
Mounting torque (TO-3P / TO-220) |
1.13/10 Nm/lb.in. | |
|
Weight |
TO-3P TO-220 TO-263 |
5.5 4 3 |
g g g |
| Technical/Catalog Information | IXTP62N15P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 62A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 2250pF @ 25V |
| Power - Max | 350W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTP62N15P IXTP62N15P |