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IXTP8N50P

MOSFET POWER MOSFET N-CHANNEL 500V 8A

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SeekIC No. : 00158450 Detail

IXTP8N50P: MOSFET POWER MOSFET N-CHANNEL 500V 8A

IXTP8N50P Data Sheet

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Part Number:
IXTP8N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

International standard packages
Unclamped Inductive Switching (UIS) rated
 Low package inductance
- easy to drive and to protect


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1M
500
500
V
V
VGES
VGEM		 Continuous
Transient
±30
±40
V
V
ID25
IDM		 TC  = 25
TC  = 25pulse width limited by TJM
8
14
A
A
IAR
EAR
EAS		 TC  = 25
TC  = 25
TC = 25
8
20
400
A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 18
10
V/ns
PD TC = 25
150
W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150



TL
TSOLD		 1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260

Md Mounting torque (TO-220)
1.13/10 Nm/lb.in.
Weight TO-220
TO-263
4
3
g
g



Parameters:

Technical/Catalog InformationIXTP8N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs800 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP8N50P
IXTP8N50P



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