MOSFET -96 Amps -85V 0.013 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 85 V | ||
| Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | - 96 A | ||
| Resistance Drain-Source RDS (on) : | 13 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 AB | Packaging : | Tube |
| Technical/Catalog Information | IXTP96P085T |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 85V |
| Current - Continuous Drain (Id) @ 25° C | 96A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 13100pF @ 25V |
| Power - Max | 298W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTP96P085T IXTP96P085T |