MOSFET 75 Amps 100V 0.025 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 75 A | ||
| Resistance Drain-Source RDS (on) : | 0.025 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-3P | Packaging : | Tube |
·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
100 100 |
V |
| VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
| ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
75 200 |
A A A A |
| IAR EAR EAS |
TC = 25°C TC = 25°C TC = 25°C |
50 30 1.0 |
A mJ J |
| dv/dt | IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 10 Ω |
10 | V/ns |
| PD | TC = 25 | 300 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| TL | 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s |
300 260 |
°C °C |
| Md | Mounting torque, TO-247 | 1.13/10 | Nm/lb.in. |
| Weight | TO-3P TO-220 TO-263 |
5.5 4 3 |
g g g |
| Technical/Catalog Information | IXTQ75N10P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 2250pF @ 25V |
| Power - Max | 360W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 74nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTQ75N10P IXTQ75N10P |