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IXTT8P50

MOSFET -8 Amps -500V 1.2 Rds

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SeekIC No. : 00154057 Detail

IXTT8P50: MOSFET -8 Amps -500V 1.2 Rds

IXTT8P50 Data Sheet

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Part Number:
IXTT8P50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 8 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : - 8 A
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 1.2 Ohms
Drain-Source Breakdown Voltage : - 500 V


Parameters:

Technical/Catalog InformationIXTT8P50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3400pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT8P50
IXTT8P50



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