MOSFET -90.0 Amps -100V 0.250 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
| Packaging : | Tube |
| Technical/Catalog Information | IXTT90P10P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 90A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 5800pF @ 25V |
| Power - Max | 462W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-268 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTT90P10P IXTT90P10P |