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IXTV102N20T

MOSFET 102 Amps 200V 22 Rds

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SeekIC No. : 00154071 Detail

IXTV102N20T: MOSFET 102 Amps 200V 22 Rds

IXTV102N20T Data Sheet

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Part Number:
IXTV102N20T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 102 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : PLUS 220 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 0.023 Ohms
Package / Case : PLUS 220
Continuous Drain Current : 102 A


Parameters:

Technical/Catalog InformationIXTV102N20T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C102A
Rds On (Max) @ Id, Vgs23 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 25V
Power - Max750W
PackagingTube
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CasePLUS-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTV102N20T
IXTV102N20T



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