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IXTV110N25TS

MOSFET 110 Amps 250V

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IXTV110N25TS: MOSFET 110 Amps 250V

IXTV110N25TS Data Sheet

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Part Number:
IXTV110N25TS
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PLUS 220 SMD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.024 Ohms
Package / Case : PLUS 220 SMD


Parameters:

Technical/Catalog InformationIXTV110N25TS
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs24 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9400pF @ 25V
Power - Max694W
PackagingTube
Gate Charge (Qg) @ Vgs157nC @ 10V
Package / CasePLUS-220SMD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTV110N25TS
IXTV110N25TS



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