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IXTX170P10P

MOSFET -170.0 Amps -100V 0.012 Rds

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IXTX170P10P: MOSFET -170.0 Amps -100V 0.012 Rds

IXTX170P10P Data Sheet

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Part Number:
IXTX170P10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 170 A
Resistance Drain-Source RDS (on) : 12 mOhms Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : PLUS247
Packaging : Tube    

Description

Configuration :
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 12 mOhms
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 170 A
Package / Case : PLUS247


Parameters:

Technical/Catalog InformationIXTX170P10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170A
Rds On (Max) @ Id, Vgs12 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 12600pF @ 25V
Power - Max890W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTX170P10P
IXTX170P10P



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