IXTY1R4N120P

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 1.4A
Gate Charge (Qg) @ Vgs: -
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252, (D-Pak)
Rds On (Max) @ Id, Vgs: -
Power - Max: -
Packaging: Tube
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: IXYS


Parameters:

Technical/Catalog Information	IXTY1R4N120P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	1.4A
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTY1R4N120P IXTY1R4N120P