MOSFET 100 Amps 55V 6.1 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mountin...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
| Resistance Drain-Source RDS (on) : | 0.0077 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | ISOPLUS 220 | Packaging : | Tube |
| Technical/Catalog Information | IXUC100N055 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 7.7 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 100nC @ 10V |
| Package / Case | ISOPLUS220? |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXUC100N055 IXUC100N055 |