JAN2N2222A

The JAN2N2222A is a kind of NPN small signal bipolar silicon transistor. It is available in the TO-18 package. There are some features as follows. (1) meets MIL 19500/255; (2) high speed,medium current bipolar transistor.

The following is some information concerning its maximum ratings. (1): collector to emitter voltage (VCEO) is 50 Vdc; (2): collector to base voltage (VCBO) is 75 Vdc; (3): emitter to base voltage (VEBO) is 6 Vdc; (4): collector current (IC) is 800 mAdc; (5): total device dissipation (PD) is 500 mW at TA is 25 and is 1.8 Watts at TC is 25 ; (6): operating and storage junction temperature range from -65 to 200 . Then is about its electrical characters. (1): the minimum collector-emitter breakdown voltage (VBRCEO) is 50 Vdc when IC is 10 mAdc and IB is 0; (2): the maximum collector-base cutoff curent (ICBO) is 10 nAdc when VCB is 60 Vdc and is 10 Adc when VCB is 60 Vdc,IE is 0 and TA is 25 ; (3): the maximum emitter-base cutoff current (IEBO) is 10 nAdc at VEB is 4 Vdc; (4): the maximum collector-emitter cutoff current (ICES) is 50 nAdc at VCE is 50 Vdc and VBE is 0 V; (5): the maximum collector-emitter saturation voltage (VCEsat) is 0.3 Vdc when IC is 150 mAdc and IB is 15 mAdc; (6): the typical base-emitter saturation voltage (VBEsat) is 0.6 Vdc and the maximum is 1.2 Vdc at the condition of IC is 150 mAdc and IB is 15 mAdc.

There is no much information,if you want more details about its electrical charaters,please download the datasheet at www.seekic.com.