JAN2N2369A

The JAN2N2369A is a kind of NPN bipolar silicon transistor. There are some features as follows. (1) meets MIL-S-19500/317; (2) fast switching which is 30 ns.

The following is some information concerning the JAN2N2369A's maximum ratings. (1): collector to emitter voltage (VCEO) is 15 Vdc; (2): collector to base voltage (VCBO) is 40 Vdc; (3): emitter to base voltage (VEBO) is 4.5 Vdc; (4): collector current (IC) is 200 mAdc; (5): total device dissipation (PD) is 0.36 Watt at TA is 25 and is 1.2 Watts at TC is 25 ; (6): operating and storage junction temperature range from -65 to 200 . Then is about its off characters. (1): the minimum collector-emitter breakdown voltage (VBRCEO) is 15 Vdc when IC is 10 mAdc and IB is 0; (2): the maximum emitter-base cutoff current (IEBO) is 0.25 Adc at VEB is 4 Vdc; (3): the maximum collector-emitter cutoff current (ICES) is 0.4 Adc at VCB is 20 Vdc; (4): the maximum collector-emitter cutoff current (ICEX) is 0.3 Adc at VCE is 10 Vdc and VBE is 0.25 Vdc; (5): the maximum storage time (Ts) is 13 ns,turn-on time (Ton) is 12 na and turn-off time (Toff) is 18 ns; (6): the output capacitance (COBO) is 4.0 pF at VCB is 5.0 Vdc and IE is 0,f is 1.0 MHz; (7): the maximum input capacitance (CIBO) is 5.0 pF when VEB is 1.0 Vdc and IC is 0,f is 1.0 MHz.

There is no much information,if you want more details about the JAN2N2369A's electrical charaters,please download the datasheet at www.seekic.com.