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JAN4N22

Features: • Overall current gain...1.5 typical (4N24)• Base lead provided for conventional transistor biasing• Rugged package• High gain, high voltage transistor• +1kV electrical isolationApplication• Eliminate ground loops• Level shifting• Line rece...

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SeekIC No. : 004381909 Detail

JAN4N22: Features: • Overall current gain...1.5 typical (4N24)• Base lead provided for conventional transistor biasing• Rugged package• High gain, high voltage transistor• +1kV ...

JAN4N22 Data Sheet

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Part Number:
JAN4N22
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

• Overall current gain...1.5 typical (4N24)
• Base lead provided for conventional transistor biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation


Application

• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control


Specifications

Input to Output Voltage........................................................................................................................ ±1kV
Emitter-Collector Voltage............................................................................................................................4V
Collector-Emitter Voltage (VCEO, IF = 0) ..................................................................................................35V
Collector-Base Voltage (VCEO, IF = 0) .....................................................................................................35V
Reverse Input Voltage ...............................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature(seenote1) ..........40mA
Peak Forward Input Current (Value applies for tw < 1µs PRR < 300 pps) ..................................................1A
Continuous Collector Current ...........................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) .....300mW
Storage Temperature..........................................................................................................-65°C to +125°C
Operating Free-Air Temperature Range .............................................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds) ............................................... 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C.


Description

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor JAN4N22 packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX and JANTXV quality levels.




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