Features: • Collector is electrically isolated from the case.• Overall current gain...1.5 typical (4N24A)• Base lead provided for conventional transistor biasing• Rugged package• High gain, high voltage transistor• +1kV electrical isolationApplication• Eli...
JAN4N22A: Features: • Collector is electrically isolated from the case.• Overall current gain...1.5 typical (4N24A)• Base lead provided for conventional transistor biasing• Rugged pack...
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Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor JAN4N22A packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.