JANSR2N7272

Features: • 8A, 100V, rDS(ON) = 0.180W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Dose Rate- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS- Typically Survives 2E12 if Current Limited to IDM• Photo Current- 1.5nA Per-RAD(Si)/s Typically• Neutron- Main...

product image

JANSR2N7272 Picture
SeekIC No. : 004381931 Detail

JANSR2N7272: Features: • 8A, 100V, rDS(ON) = 0.180W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Dose Rate- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS- Typically Survives 2E1...

floor Price/Ceiling Price

Part Number:
JANSR2N7272
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 8A, 100V, rDS(ON) = 0.180W
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2



Pinout

  Connection Diagram


Specifications

                                                                                                               JANSR2N7272   UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS                     100           V
Drain to Gate Voltage (RGS = 20kW) . . . . . . . . . . . . . . . . . . . .VDGR                     100           V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID                         8           A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID                         5           A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM                        24          A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS                      ±20          V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT                         25          W
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT                         10          W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20    W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure).  IAS                       24            A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . .  IS                           8            A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . ISM                       24            A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . .TJC, TSTG   -55 to 150         oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . TL300 oC
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0         g



Description

  The Intersil Corporation,JANSR2N7272 has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness JANSR2N7272 is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

  This MOSFET JANSR2N7272 is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.The JANSR2N7272 is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to dose rate (GAMMA DOT) exposure.Also available at other radiation and screening levels. See us on the web, Intersil's home page: Contact your local Intersil Sales Office for additional information.Ordering Information



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
LED Products
Semiconductor Modules
Isolators
Tapes, Adhesives
803
View more