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JANSR2N7389

Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedCeramic PackageLight WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -...

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SeekIC No. : 004381941 Detail

JANSR2N7389: Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedCeramic PackageLight WeightSpecifications ...

JANSR2N7389 Data Sheet

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Part Number:
JANSR2N7389
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic  Package
Light Weight


Specifications

Parameter

Units

ID @ VGS = -12V, TC = 25°C

Continuous Drain Current

-22

A

ID @ VGS = -12V, TC = 100°C

Continuous Drain Current

-14

IDM

Pulsed Drain Current

-88

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

500

mJ

IAR

Avalanche Current

-22

A

EAR

Repetitive Avalanche Energy

15

mJ

dv/dt

Peak Diode Recovery dv/dt

-23

V/ns

TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to 150


oC

Lead Temperature

300 ( 0.063 in. (1.6mm) from case for 10s)

Weight

9.3 (typical)

9




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