JANSR2N7399

The ANSR2N7399 is a kind of N-Channel Power MOSFET. This MOSFET JANSR2N7399 is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. The JANSR2N7399 is specially designed and processed to be radiation tolerant. The MOSFET JANSR2N7399 is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power.

There are some features of JANSR2N7399 as follows: (1)11A, 100V, rDS(ON) = 0.210W; (2)Total Dose: Meets Pre-RAD Specifications to 100K RAD (Si); (3)Single Event: Safe Operating Area Curve for Single Event Effects; SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias; (4)Dose Rate: Typically Survives 3E9 RAD (Si)/s at 80% BVDSS; Typically Survives 2E12 if Current Limited to IDM; (5)Photo Current: 1.5nA Per-RAD(Si)/s Typically; (6)Neutron: Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2; Usable to 3E14 Neutrons/cm2.

Then is about the maximum ratings of JANSR2N7399: (1)Drain to Source Voltage, VDS: 100 V; (2)Drain to Gate Voltage (RGS = 20kW), VDGR: 100 V; (3)Continuous Drain Current, ID: TC = 25 : 11 A; TC = 100 : 7 A; (4)Pulsed Drain Current,  IDM: 33 A; (5)Gate to Source Voltage,  VGS: ±20 V; (6)Maximum Power Dissipation,  PT:  TC = 25 :  50 W; TC = 100 : 20 W; (7)Linear Derating Factor:  0.40 W/ ; (8)Single Pulsed Avalanche Current, L = 100mH, IAS: 33 A; (9)Continuous Source Current (Body Diode),  IS: 11 A; (10)Pulsed Source Current (Body Diode),  ISM: 33 A; (11)Operating and Storage TemperatureTJ, TSTG: -55 to 150 ; (12)Lead Temperature (During Soldering), (Distance >0063in (16mm) from Case, 10s Max), TL: 300.