JANSR2N7425

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current ...

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SeekIC No. : 004381964 Detail

JANSR2N7425: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

floor Price/Ceiling Price

Part Number:
JANSR2N7425
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/23

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -35* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -24 A
IDM Pulsed Drain Current ➀ -152 A
PD @ TC = 25°C Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 500 mJ
IAR Avalanche Current ➀ -35 A
EAR Repetitive Avalanche Energy ➀ 25 mJ
dv/dt Peak Diode Recovery dv/dt ➂ -16 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 150 oC
  Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s) oC
  Weight 9.3 (typical) g



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