JANTXV2N5152

The JANTXV2N5152.This specification is approved for use by all Departments and Agencies of the Department of Defense.This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications.  Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

Features of the JANTXV2N5152 are:(1)This value applies for Pw 8.3 ms, duty cycle 1%; (2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load; (3)energy test circuit of figure 7.; (4) Derate linearly 5.7 mW/°C for TA > +25°C; (5) Derate linearly 66.7 mW/°C for TC > +25°C; (6) Derate linearly 6.67 mW/°C for TA > +25°C; (7) Derate linearly 571 mW/°C for TC > +25°C.

The absolute maximum ratings of the JANTXV2N5152 can be summarized as:(1)hFE2 ; VCE  = 5 V ;IC = 2.5 A:30~90; (2)|hfe|;VCE  = 5 V;IC = 500 mA dc:6; (3)VBE(sat)2;IC = 5 A dc;IB = 500 mA dc:2.2V; (4)VCE(sat)2;IC = 5 A dc;IB = 500 mA dc:1.5V; (5)Cobo;VCB = 10 V dc;IE  = 0;f = 1` Mhz:250pF; (6)RJA:175°C/W(TO-5, TO-39);150°C/W(U3); (7)RJC:15°C/W(TO-5, TO-39);1.75°C/W(U3).If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.