JTDA150A

SpecificationsMaximum Power Dissipation @ 252 350 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200 Operating Junction Temperature + 200DescriptionThe JTDA...

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SeekIC No. : 004382446 Detail

JTDA150A: SpecificationsMaximum Power Dissipation @ 252 350 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum T...

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Part Number:
JTDA150A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Specifications

Maximum Power Dissipation @ 252    350 Watts

Maximum Voltage and Current
BVces Collector to Base Voltage               50 Volts
BVebo Emitter to Base Voltage                3.5 Volts
Ic Collector Current                                  15 Amps

Maximum Temperatures
Storage Temperature                    - 65 to + 200
Operating Junction Temperature                + 200



Description

The JTDA-150A is a high power COMMON BASE bipolar transistor. The JTDA-150A is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor JTDA-150A includes input and output prematch for broadband performance. The JTDA-150A has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life.

 




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