JTDA50

SpecificationsMaximum Power Dissipation @ 25 2.............. 220 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage ...........................55 VoltsBVebo Emitter to Base Voltage............................. 3.5 VoltsIc Collector Current.................................................

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SeekIC No. : 004382447 Detail

JTDA50: SpecificationsMaximum Power Dissipation @ 25 2.............. 220 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage ...........................55 VoltsBVebo Emitter to Base Voltage........

floor Price/Ceiling Price

Part Number:
JTDA50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25 2..............  220 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage  ...........................55 Volts
BVebo Emitter to Base Voltage............................. 3.5 Volts
Ic Collector Current.............................................. 7.0 Amps
Maximum Temperatures
Storage Temperature .................................- 65 to + 200
Operating Junction Temperature........................... + 200



Description

The JTDA50 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The JTDA50 has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. 55AT, STYLE 1




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