JTDB25

SpecificationsMaximum Power Dissipation @ 252 97 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 5.0 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200Operating Junction Temperature + 200DescriptionThe JTDB ...

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SeekIC No. : 004382448 Detail

JTDB25: SpecificationsMaximum Power Dissipation @ 252 97 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 5.0 AmpsMaximum T...

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Part Number:
JTDB25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Specifications

Maximum Power Dissipation @ 252                            97 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage                                     55 Volts
BVebo Emitter to Base Voltage                                      3.5 Volts
Ic Collector Current                                                       5.0 Amps
Maximum Temperatures
Storage Temperature                                           - 65 to + 200
Operating Junction Temperature                                     + 200



Description

The JTDB 25 is a high power COMMON BASE bipolar transistor. The JTDB 25 is designed for pulsed systems in the frequency band 960-1215 MHz. The JTDB 25 has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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