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JTDB75

SpecificationsMaximum Power Dissipation @ 252 220 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 8.0 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200Operating Junction Temperature+ 200DescriptionThe JTDB ...

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SeekIC No. : 004382449 Detail

JTDB75: SpecificationsMaximum Power Dissipation @ 252 220 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 8.0 AmpsMaximum ...

JTDB75 Data Sheet

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Part Number:
JTDB75
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Maximum Power Dissipation @ 252                 220 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage                            55 Volts
BVebo Emitter to Base Voltage                             3.5 Volts
Ic Collector Current                                              8.0 Amps
Maximum Temperatures
Storage Temperature                                  - 65 to + 200
Operating Junction Temperature                            + 200


Description

The JTDB 75 is a high power COMMON BASE bipolar transistor. The JTDB 75 is designed for pulsed systems in the frequency band 960-1215 MHz. The JTDB 75 has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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