Purchase K4D261638F, In-stock K4D261638F From SeekIC.
Part Number: K4D261638F
Description: The K4D261638F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,1...
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K4D261638F
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DataSheet
General Description
K4D261638F General Description
The K4D261638F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.6GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
K4D261638F Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -0.5 ~ 3.6 | V |
| Voltage on VDD supply relative to Vss | VDD | -1.0 ~ 3.6 | V |
| Voltage on VDDQ supply relative to Vss | VDDQ | -0.5 ~ 3.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | °C |
| Power dissipation | PD | 2.0 | W |
| Short circuit current | IOS | 50 | mA |
Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
K4D261638F Features
• 2.5V + 5% power supply for device operation
• 2.5V + 5% power supply for I/O interface
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
-. Read latency 3, 4 and 5(clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock
• Differential clock input
• No Wrtie-Interrupted by Read Function
• 2 DQS's ( 1DQS / Byte )
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 32ms refresh period (4K cycle)
• 66pin TSOP-II
• Maximum clock frequency up to 400MHz
• Maximum data rate up to 800Mbps/pin
K4D261638F Connection Diagram
K4D261638F
PDF/DataSheet Download
- Datasheet: K4D261638F
- File Size: 231302 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4D261638
- SAMSUNG [Samsung semiconductor]
- 128Mbit GDDR SDRAM
- 231302 KB
- ·K4D261638E
- SAMSUNG [Samsung semiconductor]
- 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
- 220651 KB
- ·K4D261638E-TC2A
- SAMSUNG [Samsung semiconductor]
- 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
- 220651 KB
- ·K4D261638E-TC33
- SAMSUNG [Samsung semiconductor]
- 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
- 220651 KB
- ·K4D261638E-TC36
- SAMSUNG [Samsung semiconductor]
- 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
- 220651 KB
- ·K4D261638E-TC40
- SAMSUNG [Samsung semiconductor]
- 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
- 220651 KB
- ·K4D261638E-TC50
- SAMSUNG [Samsung semiconductor]
- 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
- 220651 KB
- ·K4D261638F-TC25
- SAMSUNG [Samsung semiconductor]
- 128Mbit GDDR SDRAM
- 231302 KB
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