K4D263238A-GC33

The K4D263238A-GC33 is a kind of 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. The maximum frequency is 300 MHz. The maximum data rate is 600 Mbps/pin. The K4D263238A-GC33 is packaged in 144-Ball FBGA.

There are some features of K4D263238A-GC33 as follows. First is 2.5 V ± 5% power supply for device operation. The second is 2.5 V ± 5% power supply for I/O interface. Then is full page burst length for sequential burst type only. Besides, start address of the full page burst should be even. The fifth is differential clock input. The sixth is no wrtie-interrupted by read function. The seventh is data I/O transactions on both edges of Data strobe. The eighth is ddge aligned data & data strobe output and center aligned data & data strobe input. The ninth is DM for write masking only. The last one is auto and self refresh.

What comes next is about the absolute maximum ratings of K4D263238A-GC33. The voltage on any pin relative to Vss (VIN, VOUT) is from -0.5 to 3.6 V. The voltage on VDD supply relative to Vss (VDD) is from -1.0 to 3.6 V. The voltage on VDD supply relative to Vss (VDDQ) is from -0.5 to 3.6 V. The storage temperature (TSTG) is from -55 to +150. The power dissipation (PD) is 2.3 W. The short circuit current (IOS) is 50 mA.