Specifications Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V Storage temperature TSTG -55 ~ +150 Power dissipation PD 1.5 W Short circuit current IOS...
K4H560438D: Specifications Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V St...
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Features: • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333 • VDD : 2.6V ± 0.1V, VDDQ...
Features: • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333 • VDD : 2.6V ± 0.1V, VDDQ...
Features: • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333 • VDD : 2.6V ± 0.1V, VDDQ...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VIN, VOUT | -0.5 ~ 3.6 | V |
Voltage on VDD & VDDQ supply relative to VSS | VDD, VDDQ | -1.0 ~ 3.6 | V |
Storage temperature | TSTG | -55 ~ +150 | |
Power dissipation | PD | 1.5 | W |
Short circuit current | IOS | 50 | mA |
The K4H560438D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.