K4H560438D

Specifications Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V Storage temperature TSTG -55 ~ +150 Power dissipation PD 1.5 W Short circuit current IOS...

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SeekIC No. : 004382788 Detail

K4H560438D: Specifications Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V St...

floor Price/Ceiling Price

Part Number:
K4H560438D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1.5 W
Short circuit current IOS 50 mA



Description

The  K4H560438D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.




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