Purchase K4H560438E-NLB0, In-stock K4H560438E-NLB0 From SeekIC.
- Table of contents:
K4H560438E-NLB0
-
Suppliers
DataSheet
General Description
K4H560438E-NLB0 Maximum Ratings
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to VSS | VIN, VOUT |
-0.5 ~ 3.6 |
V |
| Voltage on VDD & VDDQ supply relative to VSS | VDD, VDDQ |
-1.0 ~ 3.6 |
V |
| Storage temperature | TSTG |
-55 ~ +150 |
|
| Power dissipation | PD |
1.5 |
W |
| Short circuit current | IOS |
50 |
mA |
K4H560438E-NLB0 Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 54pin sTSOP(II)-300 package
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 54pin sTSOP(II)-300 package
K4H560438E-NLB0 Connection Diagram
K4H560438E-NLB0
PDF/DataSheet Download
- Datasheet: K4H560438E-NLB0
- File Size: 219982 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4H1G0438A-TCA0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TCA2
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TCB0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TLA2
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TLB0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438B-TCA0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438B-TCA2
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438B-TCB0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
K4H560438E-NLB0 Relative Products
Hotspot Suppliers Product
HFA3860BIV96
Price: 0.0001-1 USD
QFP, Baseband Processor, 2.7V to 3.6V
IRFPG50
Price: 1-4 USD
NPN Silicon Germanium, RF Transistor, 2.3 V VCEO, 3 mA IB, 1.2 V VEBO, High gain, low noise
FM16W08-SG
Price: 3-5 USD
FM16W08 64Kb Wide Voltage F-RAM
216BSP4ALA12FG
Price: 1-2 USD
216BSP4ALA12FG, BGA, RC420MB, ATI, Integrated Circuits
ADS1230IPWRG4
Price: 0.9-1.5 USD
20-bit analog-to-digital converter, TSSOP, 2.7V to 5.3V, Onboard Oscillator
LTS25-NP
Price: 1-10 USD
Current Transducer, Excellent accuracy, good linearity, low temperature drift, DIP, 2.5V
TPSD227M010R0100
Price: 0.4-0.7 USD
TPS series, electrolyte capacitors, ceramic capacitor
AD620AN
Price: 1-100 USD
Low Cost, Low Power, Instrumentation Amplifier, 1.3mA max supply current, DIP-8
HM628128BLP-8
Price: 1.2-1.5 USD
HM628128BLP-8 Hitachi Semiconductor 131,072-word x 8-bit High speed CMOS Static RAM
LM124D
Price: 0.5-0.9 USD
quad operational amplifier, sop, ±16 or 32 V
MRF6S27015GNR1
Price: 18-21 USD
TO270-2, MOSFET, 2300 to 2700 MHz, 3W, 32 VDD Operation, Integrated ESD Protection
IRFR2307Z
Price: 0.5-1.5 USD
Power MOSFET, 42A, 110W, ±20V, Advanced Process Technology, Ultra Low On-Resistance, Fast Switching
