Purchase K4H560838E-TC, In-stock K4H560838E-TC From SeekIC.
- Table of contents:
K4H560838E-TC
-
Suppliers
DataSheet
General Description
K4H560838E-TC Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to VSS | VIN, VOUT | -0.5 ~ 3.6 | V |
| Voltage on VDD & VDDQ supply relative to VSS | VDD, VDDQ | -1.0 ~ 3.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | |
| Power dissipation | PD | 1.5 | W |
| Short circuit current | IOS | 50 | mA |
K4H560838E-TC Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
K4H560838E-TC Connection Diagram
K4H560838E-TC/LA2
PDF/DataSheet Download
- Datasheet: K4H560838E-TC/LA2
- File Size: 219598 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4H1G0438A-TCA0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TCA2
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TCB0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TLA2
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438A-TLB0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438B-TCA0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438B-TCA2
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
- ·K4H1G0438B-TCB0
- SAMSUNG [Samsung semiconductor]
- 128Mb DDR SDRAM
- 685336 KB
K4H560838E-TC Relative Products
K4H560838E-LB3
K4H560838E-LB0
K4H560838E-LAA
K4H560838E-LA2
K4H560438H-UCB0
The K4H560438H is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology.The K4H560438H-UCB0 belongs to K4H560438H series. Key features of the K4H560438H-UC...
K4H560438E-ZC
The K4H560438E / K4H560838E / is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,785,216 / 4x8,388,608 words by 4/ 8bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous features with Data Strobe allow extreme...
Hotspot Suppliers Product
TAJD686M016RNJ
Price: 0.0726-0.075 USD
Standard Tantalum Transistor, 68UF, 16V, SMD, TAJD686M016RNJ
Sil9030CTU-7
Price: 2.2-3.5 USD
Sil9030CTU-7 TQFP-80 Silicon image
TD035STEB1
Price: 21-25.6 USD
TD035STEB1, Optoelectronic, LCD module
CYRF6936-40LTXC
Price: 1.2-1.5 USD
IC WIRELESS USB LP 2.4GHZ 40VQFN - CYRF6936-40LTXC
RES-15.0-PL8
Price: 450-500 USD
15.1 inch, touch screen, 8 pins, RES-15.0-PL8
EL1056CM.
Price: 5-6 USD
Monolithic High-Speed, Pin Driver, Wide output level, 250 ps dispersion, SOP
AM27C010-150DE
Price: 0.1-10 USD
1 Megabit, DIP, memory
UPD43256BCZ-70LL
Price: 0.6-1 USD
256K-BIT, CMOS static RAM, DIP28, Fast access time, high speed, low power
MPC8250AVRIHBB
Price: 41.5-45 USD
PBGA, communications processor, Dual-issue integer core, High-performance, 32-bit data bus, -0.3V ...
LF147J
Price: 6-12 USD
SMD, Wide Bandwidth, Quad JFET Input Operational Amplifier, ±22V, Wide gaibandwidth
L5970D013TR
Price: 0.48-0.52 USD
1A, 1.2V to 35V, internal P-Channel D-MOS transistor
L298N
Price: 0.001-5 USD
high voltage, high current, dual full-bridge driver, ZIP-15, 50 V, STMicroelectronics
