Features: • 200MHz Clock, 400Mbps data rate.• VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Four banks operation• Differential clock inputs(CK and CK)• DLL aligns...
K4H561638F-UCC4: Features: • 200MHz Clock, 400Mbps data rate.• VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data s...
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DescriptionThe K4H561638H-UCCC is 268,435,456 bits of double data rate synchronous DRAM organized ...
PinoutDescriptionThe K4H561638H-UCA2 is designed as 256Mb H-die DDR SDRAM which would be 66 TSOP-I...
Features: • 200MHz Clock, 400Mbps data rate.• VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V&...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VIN,VOUT |
-0.5 ~ 3.6 |
V |
Voltage on VDD & VDDQ supply relative to VSS |
VDD,VDDQ |
-1.0 ~ 3.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
°C |
Power dissipation |
PD |
1.5 |
W |
Short circuit current |
IOS |
50 |
mA |