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K4J55323QF-GC

Features: • 2.0V + 0.1V power supply for device operation• 2.0V + 0.1V power supply for I/O interface• On-Die Termination (ODT)• Output Driver Strength adjustment by EMRS• Calibrated output drive• Pseudo Open drain compatible inputs/outputs• 4 internal ban...

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SeekIC No. : 004382820 Detail

K4J55323QF-GC: Features: • 2.0V + 0.1V power supply for device operation• 2.0V + 0.1V power supply for I/O interface• On-Die Termination (ODT)• Output Driver Strength adjustment by EMRSR...

K4J55323QF-GC Data Sheet

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Part Number:
K4J55323QF-GC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• 2.0V + 0.1V power supply for device operation
• 2.0V + 0.1V power supply for I/O interface
• On-Die Termination (ODT)
• Output Driver Strength adjustment by EMRS
• Calibrated output drive
• Pseudo Open drain compatible inputs/outputs
• 4 internal banks for concurrent operation
• Differential clock inputs (CK and CK)
• Commands entered on each positive CK edge
• CAS latency : 5, 6, 7, 8 and 9 (clock)
• Additive latency (AL): 0 and 1 (clock)
• Programmable Burst length : 4
• Programmable Write latency : 1, 2, 3, 4, 5 and 6 (clock)
• Single ended READ strobe (RDQS) per byte
• Single ended WRITE strobe (WDQS) per byte
• RDQS edge-aligned with data for READs
• WDQS center-aligned with data for WRITEs
• Data Mask(DM) for masking WRITE data
• Auto & Self refresh mode
• Auto Precharge option
• 32ms, auto refresh (4K cycle)
• 144 Ball FBGA
• Maximum clock frequency up to700MHz
• Maximum data rate up to 1.4Gbps/pin
• DLL for outputs


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD supply relative to Vss VDD -1.0 ~ 3.6 V
Voltage on VDDQ supply relative to Vss VDDQ -0.5 ~ 3.6 V
MAX Junction Temperature TJ +125 °C
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 2.0 W
Short circuit current IOS 50 mA

Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The 8Mx32 GDDR3 is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 5.6GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications.




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