K4S281632K-UC75

The K4S281632K-UC75 is one member of the K4S281632K family which is designed as the 128M x 8 bit / 64M x 16 bit NAND flash memory and the NAND cell of it provides the most costeffective solution for the solid state mass storage market. This K4S281632K-UC75 provides cache program in a block and embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address input after power-on.

Features of the K4S281632K-UC75 are:(1)unique ID for copyright protection; (2)intelligent copy-back operation; (3)command register operation; (4)cache program operation for high performance program; (5)power-on auto-read operation; (6)voltage supply is 2.7 V to 3.6 V; (7)command/address/data multiplexed I/O port; (8)hardware data protection program/erase lockout during power transitions; (9)reliable CMOS floating-gate technology is endurance: 100K program/erase cycles and data retention: 10 years.

The absolute maximum ratings of the K4S281632K-UC75 can be summarized as:(1)Voltage on any pin relative to Vss: -0.6 V to + 4.6 V;(2)Temperature Under Bias: -10°C to +125°C;(3)Storage Temperature: -65 to +150 °C;(4)Short Circuit Current: 5 mA.

The electrical characteristics of this device can be summarized as:(1)Stand-by Current(TTL): 1 mA;(2)Stand-by Current(CMOS): 20 to 100 uA;(3)Input Leakage Current: ±20 uA;(4)Output Leakage Current: ±20 uA;(5)Input High Voltage: 2.0 V to Vcc+0.3;(6)Input Low Voltage, All inputs: -0.3 V to 0.8 V;(7)Output High Voltage Level: 2.4 V;(8)Output Low Voltage Level: 0.4 V;(9)Output Low Current(R/B): 8 to 10 mA. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .