Purchase K4S560432H, In-stock K4S560432H From SeekIC.
Part Number: K4S560432H
Description: The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM or...
- Table of contents:
K4S560432H
-
Suppliers
DataSheet
General Description
K4S560432H General Description
The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S560432H Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -1.0 ~ 4.6 | V |
| Voltage on VDD supply relative to Vss | VDD, VDDQ | -1.0 ~ 4.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | °C |
| Power dissipation | PD | 1 | W |
| Short circuit current | IOS | 50 | mA |
Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
K4S560432H Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• Pb/Pb-free Package
• RoHS compliant for Pb-free Package
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• Pb/Pb-free Package
• RoHS compliant for Pb-free Package
K4S160822D
PDF/DataSheet Download
- Datasheet: K4S160822D
- File Size: 1211444 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822DT-G/F10
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FL
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S161622D
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L10
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L55
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S560432H Relative Products
K4S560432E-UC75
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronousdesign allow...
K4S560432E-NC
K4S560432E
The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4x16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cyc...
K4S560432D
The K4S560432D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S560432B
The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S560432A
The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
Hotspot Suppliers Product
D70F3107AGJ
Price: 18-25 USD
32-bit, single-chip microcontroller, TQFP-144, V850E1 CPU, PCI bus master cycle control
TAJE477K010RNJ
Price: 0.59-0.8 USD
CAP TANTALUM 470UF 10V 10% SMD - TAJE477K010RNJ
PIC18F86J90-I/PT
Price: 0.01-100 USD
64KB, 80-TQFP, High-Performance Microcontroller, 2 V ~ 3.6 V, PIC, 48MHz, PIC
AT89S51-24PU
Price: 1-2 USD
CMOS 8-bit microcontroller, DIP, -1.0V to +7.0V, Three-level Program Memory Lock
SX30DN
Price: 10-12 USD
pressure sensor, +12 VDC, High impedance bridge, Low power consumption
NFC20-48S05
Price: 0.1-100 USD
SMD , DC/DC converters, 20 Watts of output power, fixed switching frequency
RS480M 216MPA4AKA22HK
Price: 1-2 USD
chipset IC, BGA, ATI Technologies Inc. , RS480M 216MPA4AKA22HK
SF5G42
Price: 0.3-1.2 USD
silicon planar type, medium power control application, TO220
STK050
Price: 6.7-7 USD
AF power Amp, 50W, Module
SAB-C515-LN
Price: 8-9 USD
8-Bit, CMOS Microcontroller, 16-bit watchdog timer
UPD444012AGY-B55X
Price: 1-1.5 USD
TSOP44, 4M-bit, CMOS STATIC RAM
ATMEGA16A-PU
Price: 4.5-5.5 USD
DIP-40, 8-bit Microcontroller, 16K Bytes , Programmable Flash
