Purchase K4S560832B, In-stock K4S560832B From SeekIC.
Part Number: K4S560832B
Description: The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 w...
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K4S560832B
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DataSheet
General Description
K4S560832B General Description
The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S560832B Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
|
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
|
Storage temperature |
TSTG |
-55 ~ +150 |
°C |
|
Power dissipation |
PD |
1 |
W |
|
Short circuit current |
IOS |
50 |
mA |
K4S560832B Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
K4S560832B Connection Diagram
K4S560832B
PDF/DataSheet Download
- Datasheet: K4S560832B
- File Size: 99596 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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K4S560832B Relative Products
K4S560832A-TC
The K4S560832A-TC is designed as one kind of 268,435,456 bits synchronous high data rate Dynamic RAM that is organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Range of operating frequencies, programmable ...
K4S560832A
The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S560432J-UC75
The K4S560432J-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use o...
K4S560432H
The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS te...
K4S560432E-UC75
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronousdesign allow...
K4S560432E-NC
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