Purchase K4S560832H, In-stock K4S560832H From SeekIC.
Part Number: K4S560832H
Description: The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM or...
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K4S560832H
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DataSheet
General Description
K4S560832H General Description
The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S560832H Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -1.0 ~ 4.6 | V |
| Voltage on VDD supply relative to Vss | VDD, VDDQ | -1.0 ~ 4.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | °C |
| Power dissipation | PD | 1 | W |
| Short circuit current | IOS | 50 | mA |
Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
K4S560832H Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• Pb/Pb-free Package
• RoHS compliant for Pb-free Package
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• Pb/Pb-free Package
• RoHS compliant for Pb-free Package
K4S160822D
PDF/DataSheet Download
- Datasheet: K4S160822D
- File Size: 1211444 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822DT-G/F10
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FL
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S161622D
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L10
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L55
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S560832H Relative Products
K4S560832E
The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4x16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cyc...
K4S560832D
The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabri-cated with SAMSUNG's high performance CMOS technology. Syn-chronous design allows precise cycle control with the use of system clock I/...
K4S560832C-TC
The K4S560832C-TC is designed as one kind of 268,435,456 bits synchronous high data rate Dynamic RAM that is organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Range of operating frequencies, programmable ...
K4S560832C
The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O ...
K4S560832B
The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S560832A-TC
The K4S560832A-TC is designed as one kind of 268,435,456 bits synchronous high data rate Dynamic RAM that is organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Range of operating frequencies, programmable ...
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