K4S561632E-UC75

The K4S561632E-UC75 is one member of the K4S561632E family which designed as the 268,435,456 bits synchronous high data rate Dynamic RAM. This K4S561632E-UC75 is organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequen-cies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features of the K4S561632E-UC75 are:(1)64ms refresh period (8K cycle);(2)RoHS compliant;(3)54 TSOP(II) Pb-free package;(4)auto & self refresh;(5)DQM (x4,x8) & L(U)DQM (x16) for masking;(6)burst read single-bit write operation;(7)all inputs are sampled at the positive going edge of the system clock;(8)four banks operation;(9)LVTTL compatible with multiplexed address;(10)JEDEC standard 3.3V power supply.

The absolute maximum ratings of the K4S561632E-UC75 can be summarized as:(1)voltage on any pin relative to Vss:-1.0 to 4.6 V;(2)voltage on VDD supply relative to Vss:-1.0 to 4.6 V;(3)storage temperature:-55 to +150 °C;(4)power dissipation:1 W;(5)short circuit current:50 mA. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .