Purchase K4S561633F-N, In-stock K4S561633F-N From SeekIC.
Part Number: K4S561633F-N
Description: The K4S643232F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 word...
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K4S561633F-N
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DataSheet
General Description
K4S561633F-N General Description
The K4S643232F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S561633F-N Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
|
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
|
Storage temperature |
TSTG |
-55 ~ +150 |
°C |
|
Power dissipation |
PD |
1 |
W |
|
Short circuit current |
IOS |
50 |
mA |
K4S561633F-N Features
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Balls BOC with 0.8mm ball pitch
( -X : Leaded, -Z : Lead Free).
K4S561633F-N
PDF/DataSheet Download
- Datasheet: K4S561633F-N
- File Size: 116776 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822D
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- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
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- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/FL
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K4S561633F-N Relative Products
K4S561633F-L
The K4S561633F-L is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-L allows precise cycle control with the use of sy...
K4S561633F-G
The K4S561633F-G is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-G allows precise cycle control with the use of sy...
K4S561633F-F
The K4S561633F-F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-F allows precise cycle control with the use of sy...
K4S561633F-C
The K4S561633F-C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-C allows precise cycle control with the use of sy...
K4S561633F - X(Z)N
The K4S561633F - X(Z)N is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F - X(Z)Nallows precise cycle control wi...
K4S561633F - X(Z)L
The K4S561633F - X(Z)L is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F - X(Z)L allows precise cycle control w...
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