K4X1G163PE-FGC6

The K4X1G163PE-FGC6 64Mx16 Mobile DDR SDRAM.

Features of the K4X1G163PE-FGC6 are:(1)VDD/VDDQ = 1.8V/1.8V; (2)Double-data-rate architecture; two data transfers per clock cycle; (3)Bidirectional data strobe(DQS); (4)Four banks operation; (5)Differential clock inputs(CK and CK); (6)MRS cycle with address key programs - CAS Latency ( 3 )- Burst Length ( 2, 4, 8, 16 )- Burst Type (Sequential & Interleave); (7)EMRS cycle with address key programs- Partial Array Self Refresh ( Full, 1/2, 1/4 Array  )- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ); (8)Internal  Temperature Compensated Self Refresh; (9)All inputs except data & DM are sampled at the positive going dge of the system clock(CK).; (10)Data I/O transactions on both edges of data strobe, DM for masking. ; (11)? Edge aligned data output, center aligned data input.; (12)? No DLL; CK to DQS is not synchronized. ; (13)? LMD, UMD for write masking only.; (14) Auto refresh duty cycle; (15)    - 7.8us for -25 to 85 °C.

The absolute maximum ratings of the K4X1G163PE-FGC6 can be summarized as:(1)Voltage on any pin relative to VSS VIN, VOUT: -0.5 ~ 2.7 V; (2)Voltage on VDD supply relative to VSS VDD :-0.5 ~ 2.7 V; (3)Voltage on VDDQ supply relative to VSS VDDQ: -0.5 ~ 2.7 V; (4)Storage temperature TSTG :-55 ~ +150 °C; (5)Power dissipation PD :1.0 W; (6)Short circuit current IOS :50 mA.

If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .