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Part Number: K5T6432YT(B)M
Description: The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which combines 64M...
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K5T6432YT(B)M
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General Description
K5T6432YT(B)M General Description
The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit Four Bank Flash and 32Mbit UtRAM.
The 64Mbit Flash memory is organized as 4M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit. The 64Mbit Flash memory is the high performance non-volatile memory fabricated by CMOS technology for peripheral circuit and DINOR IV(Diveded bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can be programmed or erased, when F-WP is low.Using Software Lock Release function, program erase operation can be executed.
The 32Mbit UtRAM is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device also supports deep power down mode for low standby current. The K5T6432YT(B)M is suitable for use in program and data memory of mobile communication system to reduce mount area. This device is available in 81-ball TBGA Type package.
K5T6432YT(B)M Maximum Ratings
| Parameter | Symbol | Conditions | Rating | Unit |
| F-Vcc Voltage | F-Vcc | With Respect to Vss | -0.2 to +4.6 | V |
| All input or Output Voltage1) | VI1 | -0.6 to +4.6 | ||
| Ambient Temperature | Ta | -40 to +85 | °C | |
| Temperature under Bias | Tbs | -50 to +95 | ||
| Storage Temperature | Tstg | -65 to +125 | ||
| Outputs Short Circuit Current | Iout | 100 (Max.) | mA |
Notes :
1. Minimum DC voltage is -0.5V on input / output pins. During transitions, the level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input / output pins is F-Vcc+0.5V which, during transitions, may overshoot to F-Vcc+1.5V for periods <20ns.
K5T6432YT(B)M Features
· Power Supply voltage : 2.7 to 3.3 V
· Organization
- Flash : 4,194,304 x 16 bit
- UtRAM : 2,097,152 x 16 bit
· Access Time (@2.7V)
- Flash : 85 ns, UtRAM : 100 ns
· Power Consumption (typical value)
- Flash Read Current : 20 mA (@5MHz)
Sequential Page Read Current : 5 mA (@5MHz)
Program/Erase Current : 35 mA (Max.)
Standby mode/Deep Power mode : 0.1 mA
- UtRAM Operating Current : 18 mA
Standby Current :120 mA
Deep Power Down : 5 mA
· Secode(Security Code) Block : Extra 32KW Block (Flash)
· Block Group Protection / Unprotection (Flash)
· 128 words Page Program (Flash)
· Flash Bank Size : 4Mb / 4Mb / 28Mb / 28Mb
· Flash Endurance : 100,000 Program/Erase Cycles
· Ambient Temperature : -25°C ~ 85°C
· Endurance : 100,000 Program/Erase Cycles
· Package :81 - ball TBGA Type - 10.8 x 10.4 mm, 0.8 mm pitch
· Organization
- Flash : 4,194,304 x 16 bit
- UtRAM : 2,097,152 x 16 bit
· Access Time (@2.7V)
- Flash : 85 ns, UtRAM : 100 ns
· Power Consumption (typical value)
- Flash Read Current : 20 mA (@5MHz)
Sequential Page Read Current : 5 mA (@5MHz)
Program/Erase Current : 35 mA (Max.)
Standby mode/Deep Power mode : 0.1 mA
- UtRAM Operating Current : 18 mA
Standby Current :120 mA
Deep Power Down : 5 mA
· Secode(Security Code) Block : Extra 32KW Block (Flash)
· Block Group Protection / Unprotection (Flash)
· 128 words Page Program (Flash)
· Flash Bank Size : 4Mb / 4Mb / 28Mb / 28Mb
· Flash Endurance : 100,000 Program/Erase Cycles
· Ambient Temperature : -25°C ~ 85°C
· Endurance : 100,000 Program/Erase Cycles
· Package :81 - ball TBGA Type - 10.8 x 10.4 mm, 0.8 mm pitch
K5T6432YT
PDF/DataSheet Download
- Datasheet: K5T6432YT
- File Size: 620842 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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