Features: · Process Technology: Full CMOS· Organization: 128K x8 bit· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 32-TSOP1-0813.4FPinoutSpecifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -0....
K6F1008V2C: Features: · Process Technology: Full CMOS· Organization: 128K x8 bit· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 32-TSOP1-0813.4FPinout...
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Features: · Process Technology: Full CMOS· Organization: 64K x16 bit· Power Supply Voltage: 2.7~3....
Features: • Process Technology: Full CMOS• Organization: 1M x16• Power Supply Vo...
Features: · Process Technology: Full CMOS· Organization: 1M x16· Power Supply Voltage: 2.7~3.6V· L...
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN,VOUT | -0.2 to VCC+0.3V | V |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 4.0V | V |
Power Dissipation | PD | 1.0 | W |
Storage temperature | TSTG | -65 to 150 | °C |
Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted within recommended operating condition. Exposure to absolute maximum rating conditions for extended period may affect reliability.
The K6F1008V2C families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.