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K6F1616U6A

Features: · Process Technology: Full CMOS· Organization: 1M x16· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-7.50x9.50Specifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -...

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K6F1616U6A: Features: · Process Technology: Full CMOS· Organization: 1M x16· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-7.50x9.50Specificat...

K6F1616U6A Data Sheet

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Part Number:
K6F1616U6A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 1M x16
· Power Supply Voltage: 2.7~3.3V
· Low Data Retention Voltage: 1.5V(Min)
· Three State Outputs
· Package Type: 48-TBGA-7.50x9.50


Specifications

Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN,VOUT
-0.2 to VCC+0.3V(Max. 3.6V)
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 3.6
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C



Description

The K6F1616U6A families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.




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