Purchase K6X1008T2D-Q, In-stock K6X1008T2D-Q From SeekIC.
Part Number: K6X1008T2D-Q
Description: The K6X1008T2D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The familie...
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K6X1008T2D-Q
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General Description
K6X1008T2D-Q General Description
The K6X1008T2D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
K6X1008T2D-Q Maximum Ratings
| Item | Symbol | Ratings | Unit | Remark |
| Voltage on any pin relative to Vss | VIN,VOUT | -0.2 to VCC+0.3V(Max. 3.9V) | V | - |
| Voltage on Vcc supply relative to Vss | VCC | -0.2 to 3.9 | V | - |
| Power Dissipation | PD | 1.0 | W | - |
| Storage temperature | TSTG | -65 to 150 | °C | - |
| Operating Temperature | TA | 0 to 70 | °C | K6X1008T2D-B |
|
-40 to 85 |
°C |
K6X1008T2D-F | ||
|
-40 to 125 |
°C |
K6X1008T2D-Q |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K6X1008T2D-Q Features
` Process Technology: Full CMOS
` Organization: 128K x 8
` Power Supply Voltage: 2.7~3.6V
` Low Data Retention Voltage: 1.5V(Min)
` Three state outputs
` Package Type: 32-SOP-525, 32-TSOP1-0820F,32-SOP-525, 32-TSOP1-0820F
K6X1008T2D-Q Connection Diagram
K6X1008T2D-Q
PDF/DataSheet Download
- Datasheet: K6X1008T2D-Q
- File Size: 156799 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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- ·K6X0808T1D-B
- SAMSUNG [Samsung semiconductor]
- 32Kx8 bit Low Power CMOS Static RAM
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- ·K6X0808T1D-F
- SAMSUNG [Samsung semiconductor]
- 32Kx8 bit Low Power CMOS Static RAM
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- SAMSUNG [Samsung semiconductor]
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K6X1008T2D-Q Relative Products
K6X1008T2D-F
The K6X1008T2D-F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The K6X1008T2D-Ffamilies support verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008T2D-F families...
K6X1008T2D-B
The K6X1008T2D-B families are fabricated by SAMSUNG¢s advanced CMOS process technology. The K6X1008T2D-Bfamilies support verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008T2D-Bfamilies ...
K6X1008C2D-Q
The K6X1008C2D-Q families are fabricated by SAMSUNG¢s advanced CMOS process technology. The K6X1008C2D-Qfamilies support verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008C2D-Qfamilies ...
K6X1008C2D-F
The K6X1008C2D-F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The K6X1008C2D-Ffamilies support verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008C2D-Ffamilies ...
K6X1008C2D-BF55
The K6X1008C2D-BF55 belongs to the K6X1008C2D family that designed as the 128M x 8 bit / 64M x 16 Bit NAND flash memory. With the help of NAND cell that consists of 32 cells, this K6X1008C2D-BF55 provides the most costeffective solution for the solid state m...
K6X1008C2D-B
The K6X1008C2D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data rete...
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