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Part Number: K6X4008C1F-Q

 

 

 

 

Description: The K6X4008C1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The fa...


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K6X4008C1F-Q General Description


The K6X4008C1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families supports various operating temperature range and various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current. 

K6X4008C1F-Q Maximum Ratings

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to VCC+0.5V(max. 7.0V) V -
Voltage on Vcc supply relative to Vss VCC -0.3 to 7.0 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6X4008C1F-B

-40 to 85

°C

K6X4008C1F-F

-40 to 125

°C

 K6X4008C1F-Q

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K6X4008C1F-Q Features

· Process Technology: Full CMOS
· Organization: 512Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL compatible
· Package Type: 32-DIP-600, 32-SOP-525,32-TSOP2-400F/R

K6X4008C1F-Q Connection Diagram

K6X4008C1F-Q  Connection Diagram

K6X4008C1F-Q datasheet

K6X4008C1F-Q
PDF/DataSheet Download

  • Datasheet: K6X4008C1F-Q
  • File Size: 181493 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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