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Part Number: K6X4008CIF-GB55

 

 

 

 

Description: The K6X4008CIF-GB55 is designed as one kind of 512Kx8 bit low power full CMOS static RAM that supports...


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K6X4008CIF-GB55 General Description


The K6X4008CIF-GB55 is designed as one kind of 512Kx8 bit low power full CMOS static RAM that supports various operating temperature range and various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.

Features of the K6X4008CIF-GB55 are:(1)process technology:full CMOS;(2)organization: 512Kx8;(3)power supply voltage:4.5 to 5.5V;(4)low data retention voltage:2V(min);(5)three state output and TTL compatible;(6)package type:32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.

The absolute maximum ratings of the K6X4008CIF-GB55 can be summarized as:(1)voltage on any pin relative to Vss:-0.5 to VCC+0.5V(max. 7.0V) V;(2)voltage on Vcc supply relative to Vss:-0.3 to 7.0 V;(3)power dissipation:1.0 W;(4)storage temperature:-65 to 150 °C;(5)operating temperature:0 to 70 °C.If you want to know more information such as the electrical characteristics about the K6X4008CIF-GB55,please download the datasheet in www.seekic.com or www.chinaicmart.com .

K6X4008CIF-GB55 Connection Diagram

K6X4008CIF-GB55  Connection Diagram

K6X4008CIF-GB55 datasheet

K6X0808C1D
PDF/DataSheet Download

  • Datasheet: K6X0808C1D
  • File Size: 170625 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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