Features: · Process Technology: Full CMOS· Organization: 256K x16· Power Supply Voltage: 2.7~3.6V· Low Data Retention Voltage: 2V(Min)· Three State Outputs· Package Type: 44-TSOP2-400FPinoutSpecifications Item Symbol Ratings Unit Remark Voltage on any pin relative to Vss VIN,VOUT...
K6X4016T3F-B: Features: · Process Technology: Full CMOS· Organization: 256K x16· Power Supply Voltage: 2.7~3.6V· Low Data Retention Voltage: 2V(Min)· Three State Outputs· Package Type: 44-TSOP2-400FPinoutSpecific...
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Features: · Process Technology: Full CMOS· Organization: 256K x16· Power Supply Voltage: 2.7~3.6V·...
DescriptionThe K6X4016T3F-TQ70 is designed with SAMSUNG¢s advanced CMOS process technology.Th...
Features: · Process Technology: Full CMOS· Organization: 256K x16· Power Supply Voltage: 2.7~3.6V·...
Item | Symbol | Ratings | Unit | Remark |
Voltage on any pin relative to Vss | VIN,VOUT | -0.2 to VCC+0.3(max. 3.9V) | V | - |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 3.9 | V | - |
Power Dissipation | PD | 1.0 | W | - |
Storage temperature | TSTG | -65 to 150 | °C | - |
Operating Temperature | TA | 0 to 70 | °C | K6X4016T3F-B |
-40 to 85 |
°C |
K6X4016T3F-F | ||
-40 to 125 |
°C |
K6X4016T3F-Q |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6X4016T3F-B families are fabricated by SAMSUNG¢s advanced CMOS process technology. The K6X4016T3F-B families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The K6X4016T3F-B families also support low data retention voltage for battery back-up operation with low data retention current.