K6X4016T3F-TQ70

The K6X4016T3F-TQ70 is designed with SAMSUNG¢s advanced CMOS process technology. The K6X4016T3F-TQ70 supports various operating temperature range and have 44-TSOP2 package type for user flexibility of system design  and also supports low data retention voltage for battery back-up operation with low data retention current.

The K6X4016T3F-TQ70 has many unique features: (1) process technology is full CMOS; (2) organization is 256K x16; (3) power supply voltage is 2.7 V to 3.6V; (4) low data retention voltage is 2V(Min); (5) three state outputs; (6) package type is 44-TSOP2-400F.

Otherwise,there are some DC and operating characteristics of K6X4016T3F-TQ70: (1): input leakage current(ILI,VIL=Vss to Vcc) is -1 uA min and  1 uA max; (2): output leakage current(ILO, CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc) is  -1 mA min and 1 mA max; (3): operating power supply current(ICC, IIO=0mA, CS=VIL, VIN=VIL or VIH, Read) is 2 mA max; (4): output low voltage(VOL,IOL=2.1mA) is 0.4 V max; (5): output high voltage(VOH,IOH=-1.0mA) is  2.4 V min; (6): standby current(TTL)(ISB,CS=VIH, Other inputs=VIL or VIH) is 0.3 mA max.