Purchase K6X8016T3B-Q, In-stock K6X8016T3B-Q From SeekIC.
Part Number: K6X8016T3B-Q
Description: The K6X8016T3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The fa...
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K6X8016T3B-Q
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General Description
K6X8016T3B-Q General Description
The K6X8016T3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
K6X8016T3B-Q Maximum Ratings
| Item | Symbol | Ratings | Unit | Remark |
| Voltage on any pin relative to Vss | VIN,VOUT | -0.2 to VCC+0.3 (max. 3.9V) | V | - |
| Voltage on Vcc supply relative to Vss | VCC | -0.2 to 3.9 | V | - |
| Power Dissipation | PD | 1.0 | W | - |
| Storage temperature | TSTG | -65 to 150 | °C | - |
| Operating Temperature | TA | -40 to 85 | °C | K6X8016T3B-F |
|
-40 to 125 |
°C |
K6X8016T3B-Q |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K6X8016T3B-Q Features
· Process Technology: Full CMOS
· Organization: 512K x16
· Power Supply Voltage: 2.7~3.6V
· Low Data Retention Voltage: 1.5V(Min)
· Three state outputs
· Package Type: 44-TSOP2-400F
· Organization: 512K x16
· Power Supply Voltage: 2.7~3.6V
· Low Data Retention Voltage: 1.5V(Min)
· Three state outputs
· Package Type: 44-TSOP2-400F
K6X8016T3B-Q Connection Diagram
K6X0808C1D
PDF/DataSheet Download
- Datasheet: K6X0808C1D
- File Size: 170625 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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K6X8016C3B-B
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