Purchase K9F2808Q0B-D, In-stock K9F2808Q0B-D From SeekIC.
Part Number: K9F2808Q0B-D
Description: The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1....
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K9F2808Q0B-D
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DataSheet
General Description
K9F2808Q0B-D General Description
The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in a page can be read out at 70ns/50ns(K9F2808Q0B:70ns, K9F2808U0B:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even write-intensive systems can take advantage of the K9F2808X0B's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F2808X0B is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption.
K9F2808Q0B-D Maximum Ratings
| Parameter | Symbol | Rating | Unit | ||
| K9F2808Q0B(1.8V) | K9F2808U0B(3.3V) | ||||
| Voltage on any pin relative to VSS | VIN/OUT | -0.6 to + 2.45 | -0.6 to + 4.6 | V | |
| VCC | -0.2 to + 2.45 | -0.6 to + 4.6 | V | ||
| VCCQ | -0.2 to + 2.45 | -0.6 to + 4.6 | V | ||
| Temperature Under Bias |
K9F2808X0B-YCB0,DCB0 | TBIAS |
-10 to + 125 |
||
| K9F2808X0B-YIB0,DIB0 |
-40 to + 125 | ||||
| Storage Temperature | TSTG |
-65 to + 150 |
|||
K9F2808Q0B-D Features
* Voltage Supply
- K9F2808Q0B : 1.7~1.9V
- K9F2808U0B : 2.7 ~ 3.6 V
*Organization
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
*Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
*528-Byte Page Read Operation
- Random Access : 10ms(Max.)
- Serial Page Access
- K9F2808Q0B : 70ns
- K9F2808U0B : 50ns
*Fast Write Cycle Time
- Program Time
- K9F2808Q0B : 300ms(Typ.)
- K9F2808U0B : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
*Command/Address/Data Multiplexed I/O Port
*Hardware Data Protection
- Program/Erase Lockout During Power Transitions
*Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
*Command Register Operation Package
- K9F2808U0B-YCB0/YIB0 :
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808X0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F2808U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
* K9F2808U0B-V(WSOPI ) is the same device as
K9F2808U0B-Y(TSOP1) except package type.
- K9F2808Q0B : 1.7~1.9V
- K9F2808U0B : 2.7 ~ 3.6 V
*Organization
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
*Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
*528-Byte Page Read Operation
- Random Access : 10ms(Max.)
- Serial Page Access
- K9F2808Q0B : 70ns
- K9F2808U0B : 50ns
*Fast Write Cycle Time
- Program Time
- K9F2808Q0B : 300ms(Typ.)
- K9F2808U0B : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
*Command/Address/Data Multiplexed I/O Port
*Hardware Data Protection
- Program/Erase Lockout During Power Transitions
*Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
*Command Register Operation Package
- K9F2808U0B-YCB0/YIB0 :
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808X0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F2808U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
* K9F2808U0B-V(WSOPI ) is the same device as
K9F2808U0B-Y(TSOP1) except package type.
K9F2808Q0B-D Connection Diagram
K9F2808Q0B-DCB0
PDF/DataSheet Download
- Datasheet: K9F2808Q0B-DCB0
- File Size: 311602 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K9F1208B0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 1054247 KB
- ·K9F1208D0A
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-P
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-D
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208Q0A
- SAMSUNG [Samsung semiconductor]
- 512Mb/256Mb 1.8V NAND Flash Errata
- 671684 KB
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