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MFG:SAMSUNG  Package Cooled:TSSOP-48  

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Part Number: K9F2808U0A-YIB0

 

MFG: SAMSUNG

Package Cooled: TSSOP-48

 

Description: The K9F2808U0A is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the ...


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K9F2808U0A-YIB0 General Description


The K9F2808U0A is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9F2808U0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F2808U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.

K9F2808U0A-YIB0 Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN
-0.6 to + 4.6
V
VCC
-0.6 to + 4.6
Temperature Under Bias
K9F2808U0A-YCB0
TBIAS
-10 to +125
°C
K9F2808U0A-YIB0
-40 to +125
Storage Temperature
TSTG
-65 to +150
°C

K9F2808U0A-YIB0 Features

· Voltage Supply : 2.7V~3.6V
· Organization
  - Memory Cell Array : (16M + 512K)bit x 8bit
  - Data Register : (512 + 16)bit x8bit
· Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase : (16K + 512)Byte
· 528-Byte Page Read Operation
  - Random Access : 10ms(Max.)
  - Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
  - Program Time : 200ms(Typ.)
  - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
  - Endurance : 100K Program/Erase Cycles
  - Data Retention : 10 Years
· Command Register Operation
· Package : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

K9F2808U0A-YIB0 Connection Diagram

K9F2808U0A-YIB0 Connection Diagram    K9F2808U0A-YIB0 Connection Diagram

K9F2808U0A-YIB0 datasheet

K9F2808U0A-YIB0
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  • Datasheet: K9F2808U0A-YIB0
  • File Size: 362648 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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